Semiconductor device manufacturing method including implementing elements of memory unit and logic unit

US10014307B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Yipeng Chan · Shanghai, CN
• Jieqiong Dong · Shanghai, CN
• Huajun JIN · Shanghai, CN
• Ruling Zhou · Shanghai, CN
• Shibi Guo · Shanghai, CN
• Bongkil Kim · Shanghai, CN

Key dates

• Filing date: Dec 7, 2015
• Grant date: Jul 3, 2018
• Expiry date: Dec 7, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/035

Abstract

A method for manufacturing a semiconductor device includes providing a substrate, a first conductor, a second conductor, a first dielectric, a second dielectric, and a designated region. The first conductor is positioned between the first dielectric and the substrate. The second conductor is positioned between the second dielectric and the substrate. The first designated region is positioned in the substrate. The method includes providing a conductive material layer, which completely covers the first dielectric and the second dielectric. The method includes partially removing the conductive material layer to form a third conductor and a fourth conductor. The first dielectric is positioned between the third conductor and the first conductor. The fourth conductor directly contacts the designated region. The method includes implementing a memory unit using the first conductor and the third conductor and includes implementing a logic unit using the second conductor and the designated region.