Bipolar transistor device and method of fabrication
US10014398B2 · kind B2 · utility
0Cited by
7References
5Claims
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Key dates
| Filing date | Apr 24, 2017 |
| Grant date | Jul 3, 2018 |
| Priority date | — |
| Expiry date | Apr 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/824
Abstract
The disclosure relates to bipolar transistor devices and a method of fabricating the same. The device comprises a field plate, in an isolation region adjacent to a base-collector junction of said active region. The isolation region comprises a gate terminal arranged to be biased independently of a collector, base or emitter terminal of said transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.