Semiconductor devices and methods for forming the same
US10014408B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2017 |
| Grant date | Jul 3, 2018 |
| Priority date | — |
| Expiry date | May 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor device includes a semiconductor substrate having a first conductivity type, and a first well region disposed in the semiconductor substrate, wherein the first well region has a second conductivity type opposite to the first conductivity type. The semiconductor device also includes a buried layer disposed in the semiconductor substrate and under the first well region, wherein the buried layer has the first conductivity type and is in contact with the first well region. The semiconductor device further includes a source electrode, a drain electrode and a gate structure disposed on the semiconductor substrate, wherein the gate structure is located between the source electrode and the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.