Semiconductor device and method for manufacturing the same
US10014414B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2014 |
| Grant date | Jul 3, 2018 |
| Priority date | — |
| Expiry date | Apr 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0312
Abstract
A transistor or the like having high field-effect mobility is provided. A transistor or the like having stable electrical characteristics is provided. A semiconductor device including a first oxide semiconductor layer, a second oxide semiconductor layer, a gate insulating film, and a gate electrode which partly overlap with one another is provided. The second oxide semiconductor layer is positioned between the first oxide semiconductor layer and the gate insulating film. The gate insulating film is positioned between the second oxide semiconductor layer and the gate electrode. The first oxide semiconductor layer has fewer oxygen vacancies than those of the second oxide semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.