Chalcogen back surface field layer

US10014423B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Priscilla D. Antunez · Tarrytown, US
• Bruce A. Ek · Pelham Manor, US
• Richard A. Haight · Mahopac, US
• Ravin Mankad · Mumbai, IN
• Saurabh Singh · Cedar Park, US
• Teodor K. Todorov · Yorktown Heights, US

Key dates

• Filing date: Sep 30, 2016
• Grant date: Jul 3, 2018
• Expiry date: Oct 4, 2036

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.