Patent · US Active

Optical semiconductor device and method for making the device

US10014437B2 · kind B2 · utility

0Cited by

1References

12Claims

0Family size

Assignees

IMEC VZW · BE
Katholieke Universiteit Leuven, KU LEUVEN R&D · BE

Inventors

Hugo Bender · Edegem, BE
Yang Qiu · Blacksburg, US

Key dates

Filing date	Mar 7, 2017
Grant date	Jul 3, 2018
Priority date	—
Expiry date	Mar 7, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76229
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An optical semiconductor device comprises, on a substrate, a fin of diamond-cubic semiconductor material and, at the base of the fin, a slab of that semiconductor material, in a diamond-hexagonal structure, that extends over the full width of the fin, the slab being configured as an optically active material. This semiconductor material can contain silicon. A method for manufacturing the optical semiconductor device comprises annealing the sidewalls of the fin, thereby inducing a stress gradient along the width of the fin.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.