Patent · US Active

Light emitting device including semiconductor nanocrystals

US10014438B2 · kind B2 · utility

1Cited by

12References

5Claims

0Family size

Assignee

Massachusetts Institute of Technology · US

Inventors

Moungi G. Bawendi · Cambridge, US
Vladimir Bulovic · Lexington, US
Seth Coe-Sullivan · Redondo Beach, US
Jean-Michel Caruge · Cambridge, US
Jonathan S. Steckel · Saratoga, US
Jonathan E. Halpert · Falls Church, US
Alexi C. Arango · Somerville, US

Key dates

Filing date	Jan 18, 2017
Grant date	Jul 3, 2018
Priority date	—
Expiry date	Jan 18, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10K59/805
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.