Light-emitting device

US10014441B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Shih-I Chen · Hsinchu, TW
• Wei-Yu Chen · Taichung, TW
• Yi-Ming Chen · Hsinchu, TW
• Ching-Pei Lin · Austin, US
• Tsung-Xian Lee · Hsinchu, TW

Key dates

• Filing date: Dec 22, 2014
• Grant date: Jul 3, 2018
• Expiry date: Jan 11, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first conductivity type semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second conductivity type semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.