Light-emitting device and manufacturing method thereof
US10014445B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jan 13, 2017 |
| Grant date | Jul 3, 2018 |
| Priority date | — |
| Expiry date | Jan 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
Abstract
A manufacturing method of a light-emitting device is disclosed. The method includes: providing a semiconductor wafer, including a substrate having a first surface and a second surface opposite to the first surface; and a semiconductor stack on the first surface; removing a portion of the semiconductor stack to form an exposed region; forming a first reflective structure on the exposed region; and providing a radiation on the second surface corresponding to a position of the first reflective structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.