Flip-chip high-voltage light emitting device and fabrication method
US10014460B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2017 |
| Grant date | Jul 3, 2018 |
| Priority date | — |
| Expiry date | Feb 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/851
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A flip-chip high-voltage light-emitting device includes: a light emitting module composed of a plurality of flip-chip light emitting units in series with a first surface and a second surface opposite to each other, wherein, gap is formed between flip-chip light emitting units, and each comprises an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer; a light conversion layer on the first surface of the light emitting module that covers side surfaces of light emitting units; an insulation layer that covers the second surface of the entire light emitting module and is only exposed to the n-type semiconductor layer in the first light emitting unit and the p-type semiconductor layer in the last light emitting unit of the light emitting module; a first support electrode and a second support electrode on the insulation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.