Organic thin film transistor having patterned interface modification layer, display substrate and display apparatus having the same, and fabricating method thereof
US10014483B2 · kind B2 · utility
2Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Apr 6, 2016 |
| Grant date | Jul 3, 2018 |
| Priority date | — |
| Expiry date | Apr 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/20
Abstract
The present application discloses a method of fabricating an organic thin film transistor comprising providing a substrate; forming a patterned interface modification layer on the substrate; and forming an organic semiconductor layer on a side of the interface modification layer distal to the substrate, wherein the patterned interface modification layer having a pattern of micro structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.