Method and apparatus including improved vertical-cavity surface-emitting lasers
US10014661B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2015 |
| Grant date | Jul 3, 2018 |
| Priority date | — |
| Expiry date | Jul 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/166
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
VCSELs and methods having improved characteristics. In some embodiments, these include a semiconductor substrate; a vertical-cavity surface-emitting laser (VCSEL) on the substrate; a first electrical contact formed on the VCSEL; a second electrical contact formed on the substrate, wherein the VCSEL includes: a first resonating cavity having first and second mirrors, at least one of which partially transmits light incident on that mirror, wherein the first second mirrors are electrically conductive. A first layer is between the first mirror and the second mirror and has a first aperture that restricts the path of current flow. A second layer is between the first layer and the second mirror and also restricts the electrical current path. A multiple-quantum-well (MQW) structure is between the first mirror and the second mirror, wherein the first and second apertures act together to define a path geometry of the current through the MQW structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.