Copper alloy and method for manufacturing the same
US10017840B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 23, 2015 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Jul 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01B13/00
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A copper alloy of the present invention contains 5.00 to 8.00 atomic percent of Zr and includes Cu and a Cu—Zr compound, and two phases of the Cu and the Cu—Zr compound form a mosaic-like structure which includes no eutectic phase and in which when viewed in cross section, crystals having a size of 10 μm or less are dispersed. This copper alloy is formed by a manufacturing method including a sintering step of performing spark plasma sintering on a Cu—Zr binary system alloy powder at a temperature of 0.9 Tm ° C. or less (Tm(° C.): melting point of the alloy powder) by supply of direct-currant pulse electricity, the Cu—Zr binary system alloy powder having an average grain diameter of 30 μm or less and a hypoeutectic composition which contains 5.00 to 8.00 atomic percent of Zr. The Cu—Zr compound may include at least one of Cu5Zr, Cu9Zr2, and Cu8Zr3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.