High rate deposition systems and processes for forming hermetic barrier layers
US10017849B2 · kind B2 · utility
2Cited by
19References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Aug 11, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/541
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low Tg glass, a precursor of a low Tg glass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.