Gas barrier film and method of manufacturing gas barrier film
US10017854B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2016 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Sep 20, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/505
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A gas barrier film includes a substrate film and an inorganic layer, in which the inorganic layer includes Si, N, H, and O, the inorganic layer includes a uniform region having a thickness of more than 5 nm at the center in a thickness direction, in the uniform region, a ratio of Si, N, H, and O is uniform and an O proportion is low, and either or both interface-contact regions of the inorganic layer are oxygen-containing regions in which the O proportion represented by the expression “O Proportion: (Number of O/Total Number of Si, N, and O)×100%” increases in a direction from the uniform region side to an interface and in which a variation of the O proportion per unit thickness is 2%/nm to 8%/nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.