Growth method of graphene
US10017878B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2015 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Mar 26, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a growth method of grapheme, which at least comprises the following steps: S1: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S3: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.