Low-dropout linear regulator with super transconductance structure
US10019023B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2017 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Aug 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/45318
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A low-dropout regulator with super transconductance structure relates to the field of power management technology. The super-transconductance structure refers to the circuit structure in which the voltage signal is converted into a current signal and amplified with a high magnification. The error amplifier EA in the present invention uses the super transconductance structure. The differential input pair of the error amplifier EA samples the difference between the feedback voltage VFB and the dynamic reference voltage VREF1. The difference is converted into a small signal current, which goes through a first-stage of current mirror to be amplified by K1, and through a second-stage of current mirror to be amplified by K2. The amplified signal is used to regulate the gate of the adjustment transistor MP. The error amplifier EA with the super transconductance structure is used to expand the bandwidth of the error amplifier EA.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.