Semiconductor device and method of fabricating the same
US10020201B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2016 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Apr 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: an active region provided on a substrate; an inlet channel formed as a single cavity buried in one side of the substrate; an outlet channel formed as a single cavity buried in the other side of the substrate; a micro channel array comprising a plurality of micro channels, wherein the plurality of micro channels are formed as a plurality of cavities buried in the substrate, and one end of the micro channel array is connected to a side of the inlet channel and the other end of the micro channel array is connected to a side of the outlet channel; and a micro heat sink array separating the micro channels from one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.