Power electronics assemblies having a wide bandgap semiconductor device and an integrated fluid channel system
US10020243B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2016 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Jun 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1426
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power electronics assembly having a semiconductor device stack having a wide bandgap semiconductor device, a first electrode electrically coupled the wide bandgap semiconductor device, and a second electrode electrically coupled the wide bandgap semiconductor device. A substrate layer is coupled to the semiconductor device stack such that the first electrode is positioned between the substrate layer and the wide bandgap semiconductor device. The substrate layer includes a substrate inlet port and a substrate outlet port. An integrated fluid channel system extends between the substrate inlet and outlet ports and includes a substrate fluid inlet channel extending from the substrate inlet port into the substrate layer, a substrate fluid outlet channel extending from the substrate outlet port into the substrate layer, and one or more semiconductor fluid channels extending into the wide bandgap semiconductor device in fluid communication with the substrate fluid inlet and outlet channels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.