Transistor and semiconductor device
US10020322B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2016 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Dec 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/80
Abstract
A highly reliable semiconductor device which includes an oxide semiconductor is provided. Alternatively, a transistor having normally-off characteristics which includes an oxide semiconductor is provided. The transistor includes a first conductor, a first insulator, a second insulator, a third insulator, a first oxide, an oxide semiconductor, a second conductor, a second oxide, a fourth insulator, a third conductor, a fourth conductor, a fifth insulator, and a sixth insulator. The second conductor is separated from the sixth insulator by the second oxide. The third conductor and the fourth conductor are separated from the sixth insulator by the fifth insulator. The second oxide has a function of suppressing permeation of oxygen as long as oxygen contained in the sixth insulator is sufficiently supplied to the oxide semiconductor through the second oxide. The fifth insulator has a barrier property against oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.