Substrate structure
US10020352B2 · kind B2 · utility
3Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2016 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Jul 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/121
Abstract
A substrate structure may be used in a display device. The substrate structure may include a base substrate, a transistor, and a silicon oxynitride layer. The transistor may include a semiconductor member and a gate electrode and may overlap the base substrate. The silicon oxynitride layer may directly contact at least one of the base substrate, the semiconductor member, and the gate electrode and may include (and/or contain) a hydrogen atom set. A hydrogen concentration in the silicon oxynitride layer may be greater than or equal to 1.52 atomic percent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.