Field-effect transistor, semiconductor memory display element, image display device, and system
US10020374B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2010 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Dec 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/123
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A field-effect transistor includes a substrate; a source electrode, a drain electrode, and a gate electrode that are formed on the substrate; a semiconductor layer by which a channel is formed between the source electrode and the drain electrode when a predetermined voltage is applied to the gate electrode; and a gate insulating layer provided between the gate electrode and the semiconductor layer. The gate insulating layer is formed of an amorphous composite metal oxide insulating film including one or two or more alkaline-earth metal elements and one or two or more elements selected from a group consisting of Ga, Sc, Y, and lanthanoid except Ce.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.