Monolithically integrated infrared transceiver
US10020634B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Dec 18, 2014 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Mar 15, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A Schottky diode is monolithically integrated into the core of an infrared semiconductor laser (e.g., a quantum cascade laser) to create a heterodyned infrared transceiver. The internal mode field of the infrared semiconductor laser couples to an embedded Schottky diode and can mix the infrared fields to generate a response at the difference frequency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.