Installation for depositing films onto a substrate
US10023961B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2014 |
| Grant date | Jul 17, 2018 |
| Priority date | — |
| Expiry date | Jul 3, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C17/001
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An installation, comprising a chamber comprising two ends, a transport unit and a support unit which introduce a two-sided substrate into the chamber, a stabilized high-voltage high-frequency power supply of at least 200 kW, comprising an HF transformer comprising a primary and a secondary circuit connected to terminals, at least two electrodes being connected to the terminals of the secondary circuit, said electrodes being placed on each side of the substrate, at least one dielectric barrier placed between the at least two electrodes; a power supply regulation/control unit placed upstream of the HF transformer that is capable of increasing an active power/reactive power ratio, an introducing unit for introducing at least one reactive substance into the chamber, and an extracting unit for extracting residual substances, wherein an adjustable inductor is placed in the secondary circuit of the transformer in parallel with a circuit comprising the at least two electrodes, and the adjustable inductor enables a phase shift between a voltage generated between the electrodes and a total current delivered by the high-voltage source to be modulated, and the power supply regulation/control u…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.