Substrate for solidifying a silicon ingot

US10023972B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Jean-Paul Garandet · Aix-les-Bains, FR
• Denis Camel · Chambéry, FR
• Béatrice Drevet · Grenoble, FR
• Nicolas Eustathopoulos · Grenoble, FR
• Charles Huguet · Paris, FR
• Johann Testard · Annecy, FR
• Rayisa Voytovych · Échirolles, FR

Key dates

• Filing date: Sep 12, 2014
• Grant date: Jul 17, 2018
• Expiry date: Sep 12, 2034

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C04B2111/00879
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

A substrate, in particular intended for contact with liquid silicon, wherein it is at least partially surface-coated with a multilayer coating formed by: at least one layer, known as the adhesion layer, contiguous with the substrate, having an open porosity of at least 30%, and formed of a material comprising silica and silicon nitride, said material having a silica content of between 10 wt.-% and 55 wt.-% in relation to the total weight thereof; and a layer different from the adhesion layer, known as the release layer, located on the surface of the adhesion layer and formed of a material including silica and silicon nitride, said material having a silica content of between 2 wt.-% and 10 wt.-% in relation to the total weight thereof.