Method of irradiating ultraviolet light on silicon substrate surface for improving quality of native oxide layer and apparatus using the same
US10026620B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2017 |
| Grant date | Jul 17, 2018 |
| Priority date | — |
| Expiry date | Jun 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3105
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention relates to the growth of a native oxide layer on a surface of a silicon substrate. Deep ultraviolet (UV) light is irradiated to thereby effectively improve the quality of the native oxide layer. By improving the quality, the difficulty of the surface treatment of a cross-section sample for scanning capacitance microscopy (SCM) is improved. The life cycle and reliability of the sample are also improved with enhanced reproducibility for the measurement of SCM. Thus, the present invention provides an improved method and an apparatus using the same to prepare a cross-sectional sample for SCM. The feasibility and the concrete method for enhancing oxide layer quality on a silicon substrate surface by UV light irradiation under a humidity-controlled environment are established. The optimum parameters of irradiation time for n-type and p-type samples are made.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.