Singulation of ion-exchanged substrates
US10026651B1 · kind B1 · utility
15Cited by
15References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 21, 2017 |
| Grant date | Jul 17, 2018 |
| Priority date | — |
| Expiry date | Jun 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0243
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a substrate involves patterning the substrate into active areas and dicing lanes. After the substrate is patterned one or more stress layers are formed the substrate. A change in stress along a thickness of the substrate in the active areas is larger than a change in stress along the thickness of the substrate in the dicing lanes. The substrate is subsequently diced along the dicing lanes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.