Bidirectional power semiconductor

US10026732B2 · kind B2 · utility

Assignee

• ABB Schweiz AG · CH

Inventors

• Munaf Rahimo · Uezwil, CH
• Martin Arnold · Cambridge, GB
• Umamaheswara Vemulapati · Windisch, CH

Key dates

• Filing date: Jun 19, 2017
• Grant date: Jul 17, 2018
• Expiry date: Jun 19, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/10

Abstract

A bidirectional power semiconductor device with full turn-off control in both current directions and improved electrical and thermal properties is provided, the device comprises a plurality of first gate commutated thyristor (GCT) cells and a plurality of second GCT cells alternating with each other, a first base layer of each first GCT cell is separated from a neighbouring second anode layer of a neighbouring second GCT cell by a first separation region, and a second base layer of each second GCT cell is separated from a neighbouring first anode layer of a neighbouring first GCT cell by a second separation region.