Patent · US Active

Decoupling capacitor with metal programmable knee frequency

US10026735B2 · kind B2 · utility

0Cited by

7References

30Claims

0Family size

Assignee

QUALCOMM Incorporated · US

Inventors

Andi ZHAO · San Diego, US
Ramaprasath Vilangudipitchai · San Diego, US
Dorav Kumar · San Diego, US

Key dates

Filing date	Nov 23, 2016
Grant date	Jul 17, 2018
Priority date	—
Expiry date	Nov 23, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/992
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A MOS IC includes pMOS transistors, each having a pMOS transistor drain, source, and gate. Each pMOS transistor gate extends in a first direction and is coupled to other pMOS transistor gates. Each pMOS transistor source/drain are coupled to a first voltage source. The MOS IC further includes a first metal interconnect extending over the pMOS transistors. The first metal interconnect has first and second ends. The first metal interconnect is coupled to each pMOS transistor gate and is coupled to a second voltage source less than the first voltage source. One of each pMOS transistor gate or the second voltage source is coupled to the first metal interconnect through at least one tap point located between the first and second ends. The pMOS transistors and the first metal interconnect function as a decoupling capacitor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.