Image sensor with a cross-wafer capacitor
US10026771B1 · kind B1 · utility
9Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2015 |
| Grant date | Jul 17, 2018 |
| Priority date | — |
| Expiry date | Feb 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
One or more cross-wafer capacitors are formed in an electronic component, circuit, or device that includes stacked wafers. One example of such a device is a stacked image sensor. The image sensor can include two or more wafers, with two wafers that are bonded to each other each including a conductive segment adjacent to, proximate, or abutting a bonding surface of the respective wafer. The conductive segments are positioned relative to each other such that each conductive element forms a plate of a capacitor. A cross-wafer capacitor is formed when the two wafers are attached to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.