Nitride white-light light-emitting diode

US10026867B2 · kind B2 · utility

Assignee

• Xiamen Sanan Optoelectronics Technology Co., Ltd. · CN

Inventors

• Jinjian Zheng · Xiamen, CN
• Huanrong Yang · Xiamen, CN
• Feilin Xun · Xiamen, CN
• Shutao Liao · Xiamen, CN
• Zhijie Li · Weifang, CN
• Mingyue WU · Xiamen, CN
• Chilun CHOU · Xiamen, CN
• Feng-Yu Lin · Sichuan, CN
• Shuiqing LI · Xiamen, CN
• Junyong Kang · Xiamen, CN

Key dates

• Filing date: Aug 26, 2017
• Grant date: Jul 17, 2018
• Expiry date: Aug 26, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8584

Abstract

A nitride white-light LED includes: a substrate; an epitaxial layer; an N-type electrode and a P-type electrode; channels are formed on the substrate and the epitaxial layer; temperature isolation layers are formed with low thermal conductivity material thereon to form three independent temperature zones (Zones I/II/III) on a single chip; temperature control layers are formed with high thermal conductivity material on the side wall of the epitaxial layer and the back surface of the substrate at Zones I/II/III, and control temperature of the epitaxial layer and the substrate; based on different thermal expansion coefficients, lattice constants of the nitride and the substrate at Zones I/II/III are regulated to adjust the biaxial stress to which the nitride; quantum wells change conduction band bottom and valence band top positions to change forbidden band widths and light-emitting wavelengths; the LED can emit red, green and blue lights by a single chip.