Quantum dot electronic device and quantum dot transfer printing method
US10026913B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 22, 2015 |
| Grant date | Jul 17, 2018 |
| Priority date | — |
| Expiry date | Jul 22, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/95
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A quantum dot electronic device comprises a first encapsulation layer, a first electrode disposed on the first encapsulation layer, a quantum dot pattern disposed on the first electrode, a second electrode disposed on the quantum dot pattern and a second encapsulation layer disposed on the second electrode. The quantum dot pattern may be formed by an intaglio transfer printing method, where the method comprises forming a quantum dot layer on a donor substrate, picking up the quantum dot layer using a stamp, putting the quantum dot layer into contact with an intaglio substrate using the stamp and separating the stamp from the intaglio substrate. Using the quantum dot transfer printing method, a subminiature quantum dot pattern can be transferred at a high transfer rate. Accordingly, a highly integrated quantum dot electronic device exhibiting excellent performance and a high integrated quantum dot light emitting device with an ultrathin film can be realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.