Ground fault isolation for power converters with silicon carbide MOSFETs
US10027240B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2017 |
| Grant date | Jul 17, 2018 |
| Priority date | — |
| Expiry date | Jan 6, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Systems and methods for grounding power generation units with silicon carbide MOSFET power converters are provided. A power generation unit can include a power generator configured to generate multiphase alternating current power at a first voltage. The power generation unit can also include a power converter configured to convert the multiphase alternating current power from the power generator at the first voltage to multiphase alternating current power at a second voltage. The power converter can include one or more silicon carbide MOSFETs and at least one heatsink configured to remove heat from the power converter. The at least one heatsink of the power converter can be electrically connected to a local ground formed by one or more components of the power generation unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.