Semiconductor devices and methods for manufacturing the same
US10032673B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2017 |
| Grant date | Jul 24, 2018 |
| Priority date | — |
| Expiry date | May 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
Abstract
A method for manufacturing a semiconductor device includes forming a first gate structure on a semiconductor substrate. The first gate structure includes a first gate dielectric layer and a first gate electrode layer formed thereon. The method also includes forming an insulating material layer on the semiconductor substrate, wherein the semiconductor substrate and the first gate structure are covered by the insulating material layer. The method further includes removing a portion of the insulating material layer in a high-voltage element region to form a second gate dielectric layer in the high-voltage element region on the semiconductor substrate, and forming a second gate electrode layer on the second gate dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.