Thin film transistor and MOS field effect transistor that include hydrophilic/hydrophobic material, and methods for manufacturing the same
US10032920B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2017 |
| Grant date | Jul 24, 2018 |
| Priority date | — |
| Expiry date | May 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The thin film transistor includes a first insulating layer provided on a substrate; a source electrode and a drain electrode that are provided on the first insulating layer; a semiconductor layer provided so as to cover the first insulating layer, the source electrode, and the drain electrode; a second insulating layer provided on the semiconductor layer; and a gate electrode provided on the second insulating layer, in which the first insulating layer is formed of a hydrophilic/hydrophobic material and has a recess portion, and the source electrode and the drain electrode are provided so as to fill the recess portion of the first insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.