Metal oxide thin film, method for manufacturing the same, and solution for metal oxide thin film
US10032923B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2011 |
| Grant date | Jul 24, 2018 |
| Priority date | — |
| Expiry date | Sep 5, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/244
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure provides a solution for a metal oxide semiconductor thin film, including metal hydroxides dissolved in an aqueous or nonaqueous solvent and an acid/base titrant for controlling solubility of metal hydroxides. A solution is synthesized to improve stability and semiconductive performance of a device through addition of other metal hydroxides. The solution is applied on a substrate and annealed by using various annealing apparatuses to obtain a high-quality metal oxide thin film at low temperatures. The thin film is optically transparent, and thus can be applied to thin films for various electronic devices, solar cells, various sensors, memory devices, and the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.