Semiconductor film, transistor, semiconductor device, display device, and electronic appliance
US10032928B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2017 |
| Grant date | Jul 24, 2018 |
| Priority date | — |
| Expiry date | Jan 27, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/40
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.