Solar cell having Ti- or Ta-containing thermal and diffusion barrier layer for foil-based metallization

US10032942B2 · kind B2 · utility

Assignees

• SUNPOWER CORPORATION · US
• TOTAL MARKETING SERVICES · FR

Inventors

• Taeseok Kim · Pleasanton, US
• Robert Woehl · San Jose, US
• Gabriel Harley · Mountain View, US
• Nils-Peter Harder · San Jose, US
• Jens Dirk Moschner · Tarp, DE
• Matthieu Moors · Braine-le-Château, BE
• Michel Arsène Olivier Ngamo Toko · Brussels, BE

Key dates

• Filing date: Apr 20, 2017
• Grant date: Jul 24, 2018
• Expiry date: Apr 20, 2037

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

Methods of fabricating solar cells using a metal-containing thermal and diffusion barrier layer in foil-based metallization approaches, and the resulting solar cells, are described. For example, a method of fabricating a solar cell includes forming a plurality of semiconductor regions in or above a substrate. The method also includes forming a metal-containing thermal and diffusion barrier layer above the plurality of semiconductor regions. The method also includes forming a metal seed layer on the metal-containing thermal and diffusion barrier layer. The method also includes forming a metal conductor layer on the metal seed layer. The method also includes laser welding the metal conductor layer to the metal seed layer. The metal-containing thermal and diffusion barrier layer protects the plurality of semiconductor regions during the laser welding.