Patent · US Active

AllnAsSb avalanche photodiode and related method thereof

US10032950B2 · kind B2 · utility

13Cited by

20References

24Claims

0Family size

Assignee

University of Virginia Patent Foundation · US

Inventors

Joe C. Campbell · Charlottesville, US
Min Ren · Nanhu, CN
Madison Woodson · Virginia Beach, US
Yaojia Chen · Jersey City, US
Seth Bank · Austin, US
Scott Maddox · Hillsboro, US

Key dates

Filing date	Feb 22, 2017
Grant date	Jul 24, 2018
Priority date	—
Expiry date	Feb 22, 2037

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/544
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An avalanche photodiode, and related method of manufacture and method of use thereof, that includes a first contact layer; a multiplication layer, wherein the multiplication layer includes AlInAsSb; a charge, wherein the charge layer includes AlInAsSb; an absorption, wherein the absorption layer includes AlInAsSb; a blocking layer; and a second contact layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.