Semiconductor light emitting device of a flip chip and method for manufacturing same
US10032960B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2015 |
| Grant date | Jul 24, 2018 |
| Priority date | — |
| Expiry date | Jun 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/14
Abstract
Disclosed is a semiconductor light emitting device including: multiple semiconductor layers including a first semiconductor layer, a second semiconductor layer, and an active layer; an electrode electrically connected with the multiple semiconductor layers; a light absorption barrier disposed about at least the electrode; and a non-conductive reflective film adapted to cover the multiple semiconductor layers, the light absorption barrier and the electrode and to reflect light from the active layer, wherein the non-conductive reflective film has an abnormal region of a lower reflectivity around the electrode due to a height difference between the light absorption barrier and the electrode, wherein a portion of the non-conductive reflective film exposed from the electrode is made longer than the abnormal region as seen in a cross-sectional view of the electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.