Surface-emitting semiconductor laser, method for producing the same, surface-emitting semiconductor laser device, optical transmission device, and information processing device
US10033157B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2015 |
| Grant date | Jul 24, 2018 |
| Priority date | — |
| Expiry date | Mar 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface-emitting semiconductor laser includes a first semiconductor multilayer film reflector, an active region, a second semiconductor multilayer film reflector, and a current confinement layer including an oxidized region formed by selective oxidation. The current confinement layer includes a first semiconductor layer having a relatively high Al content, a second semiconductor layer that is adjacent to the first semiconductor layer on an active-region side of the first semiconductor layer and has a lower Al content than the first semiconductor layer, and a composition-gradient layer adjacent to the first semiconductor layer on a side of the first semiconductor layer which is opposite to the active-region side. A portion of the composition-gradient layer which faces the first semiconductor layer has a lower Al content than the first semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.