Interband cascade light emitting devices
US10033160B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 4, 2016 |
| Grant date | Jul 24, 2018 |
| Priority date | — |
| Expiry date | Oct 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34366
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An interband cascade (IC) light emitting device comprising a plurality of interband cascade stages, wherein at least one of the IC stages is constructed to have an electron injector made of one or more QWs, a type-I quantum well (QW) active region, a barrier layer positioned between the active region and the electron injector, a hole injector made of one or more QWs, and a barrier layer positioned between the active region and the hole injector. In at least one embodiment, a type II heterointerface layer is between the electron injector and an adjacent hole injector. The well layer of the type-I QW active region has compressive strain, while the barrier layers which flank the type-I QW active region comprise tensile strain layers. In certain embodiments, the electron injector and the hole injector comprise tensile strained layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.