Nanostructured lanthanum oxide humidity sensor
US10036717B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2015 |
| Grant date | Jul 31, 2018 |
| Priority date | — |
| Expiry date | Dec 28, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/127
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A thin film gas sensor device includes a substrate, a nanostructured thin film layer, and a first and a second electrode. The nanostructured thin film layer is supported by the substrate and is formed with a semi-conductor material including holes. The semiconductor material is configured to undergo an increase in a density of the holes in the presence of a target gas, thereby decreasing an electrical resistance of the nanostructured thin film layer. The first and the second electrodes are supported by the substrate and are operably connected to the nanostructured thin film layer, such that the decrease in electrical resistance can be detected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.