Patent · US Active

Reference voltage generation circuit

US10037047B2 · kind B2 · utility

3Cited by

2References

15Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

Anthony Quelen · Seyssinet-Pariset, FR

Key dates

Filing date	Nov 30, 2016
Grant date	Jul 31, 2018
Priority date	—
Expiry date	Nov 30, 2036

Classification

Technology area (CPC G)Physics
CPC primaryG05F3/242
WIPO fieldControl
WIPO sectorInstruments

Abstract

An FDSOI reference voltage generation circuit, including a CTAT current generation circuit; a PTAT-type voltage generation circuit including a first branch including first and second series-connected transistors, the front surface gates of the first and second transistors being connected to the conduction node of the second transistor opposite to the first transistor; a third diode-assembled transistor having a conduction node connected to an output node of the PTAT voltage generation circuit and having its other conduction node forming a reference voltage supply node; and a current mirror; wherein the first and second transistors are of LVT type and the third transistor is of RVT type.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.