Cationic particle containing slurries and methods of using them for CMP of spin-on carbon films
US10037889B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2017 |
| Grant date | Jul 31, 2018 |
| Priority date | — |
| Expiry date | Mar 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides methods for chemical mechanical polishing (CMP polishing) spin coated organic polymer films on a semiconductor wafer or substrate as part of lithography or as part of electronic packaging. The methods comprising spin coating an organic polymer liquid on a semiconductor wafer or substrate; at least partially curing the spin coating to form an organic polymer film; and, CMP polishing the organic polymer film with a polishing pad and an aqueous CMP polishing composition having a pH ranging from 1.5 to 4.5 and comprising elongated, bent or nodular silica particles containing one or more cationic nitrogen or phosphorus atoms, from 0.005 to 0.5 wt. %, based on total CMP polishing composition solids, of a sulfate group containing C8 to C18 alkyl or alkenyl group surfactant, and a pH adjusting agent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.