Patent · US Active

Power semiconductor module and manufacturing method of power semiconductor module

US10037930B2 · kind B2 · utility

6Cited by
0References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 11, 2015
Grant dateJul 31, 2018
Priority date
Expiry dateMay 11, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An object of the present invention is to provide a power semiconductor module that can secure a satisfactory cooling without expanding the size of a case component. In the power semiconductor module according to the present invention, a frame case includes a front surface, a back surface, and a pair of side surfaces and formed with an opening part in at least one of the front surface and the back surface. A metal base is inserted into the opening part of the frame case. A frame case is provided with a joining part FW to which the peripheral part of the metal base and the peripheral part of the opening part of the frame case are joined. A first concaved part and a second concaved part are formed respectively in each of a pair of side surfaces of the frame case. Each of the concaved parts is prolonged toward an inner side of the frame case from the side surfaces, and includes a bottom surface formed facing the joining part FW side in an intermediate position of the thickness direction of each of the side surfaces.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.