Semiconductor device and manufacturing method therefor
US10037966B2 · kind B2 · utility
0Cited by
12References
6Claims
0Family size
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Key dates
| Filing date | Dec 9, 2016 |
| Grant date | Jul 31, 2018 |
| Priority date | — |
| Expiry date | Dec 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3841
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The joint reliability in flip chip bonding of a semiconductor device is enhanced. Prior to flip chip bonding, flux 9 is applied to the solder bumps 5a for flip chip bonding over a substrate and reflow/cleaning is carried out and then flip chip bonding is carried out. This makes is possible to thin the oxide film over the surfaces of the solder bumps 5a and make the oxide film uniform. As a result, it is possible to suppress the production of local solder protrusions to reduce the production of solder bridges during flip chip bonding and enhance the joint reliability in the flip chip bonding of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.