Patent · US Active

Semiconductor module and stack arrangement of semiconductor modules

US10037978B2 · kind B2 · utility

1Cited by
2References
20Claims
0Family size

Assignee

Inventor

Key dates

Filing dateApr 24, 2017
Grant dateJul 31, 2018
Priority date
Expiry dateApr 24, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/00014
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor module and a stack arrangement of semiconductor modules is proposed. The semiconductor module comprises an insulated gate bipolar transistor, a wide band-gap switch, a base plate, and a press device. The insulated gate bipolar transistor and the wide band-gap switch are connected in parallel and are each mounted with a first planar terminal to a side of the base plate. Further, a second planar terminal of the insulated gate bipolar transistor and a second planar terminal of the wind band-gap switch are connected with an electrically conductive connection element, and the press device is arranged on the second planar terminal of the insulated gate bipolar transistor. Hence, when arranging the semiconductor modules in a stack arrangement, any press force is primarily applied to the insulated gate bipolar transistors of the semiconductor modules.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.