CMOS image sensor and fabrication method thereof

US10038027B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Dae-Sub Jung · Shanghai, CN
• Deyan Chen · Singapore, SG
• Xuejie Shi · Shanghai, CN

Key dates

• Filing date: Jan 3, 2017
• Grant date: Jul 31, 2018
• Expiry date: Jan 3, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/8037

Abstract

The present disclosure provides CMOS image sensors and fabrication methods thereof. An exemplary fabrication process of a CMOS image sensor includes providing a substrate having a first region and a second region connecting with the first region at a first end of the first region; forming a transfer transistor on surface of the substrate in the second region; forming a first implanting region in the substrate in the first region using a first mask; forming a second implanting region in the first implanting region by, the first implanting region being separated into a third implanting region on the second implanting region and a fourth implanting region under the second implanting region; forming a fifth region in the second region at the first end using a second mask, connecting the third implanting region with the fourth implanting region.