Manufacture method of TFT substrate and manufactured TFT substrate
US10038074B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 26, 2016 |
| Grant date | Jul 31, 2018 |
| Priority date | — |
| Expiry date | Jan 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6745
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a manufacture method of a TFT substrate and a manufactured TFT substrate. By locating the first channel region and the first lightly doped offset region between the first source and the drain, and locating the second channel region and the second lightly doped offset region between the second source and the drain, and forming the first overlapping region and the second overlapping region respectively between the drain and the gate and between the second source and the gate, thus, the paths of the current flowing from the first, the second sources to the drain and the current flowing from the drain to the first, the second sources are the same. Namely, the current path from source to the drain and the current path from the drain to the source are the same. According, the symmetry of the TFT structure is realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.